UM3004 1 n-ch 30v fast switching mosfets symbol parameter rating units v ds drain-source voltage 30 v v gs gate-sou u ce voltage f 20 3 v i d @t a =25 continuous drain current, v gs @ 10v 1 10.3 a i d @t a =70 continuous drain current, v gs @ 10v 1 8.2 a i dm pulsed drain current 2 42 a eas single pulse avalanche energy 3 138 mj i as avalanche current 35 a p d @t a =25 total power dissipation 4 1.5 w t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol parameter 3 typ. max. unit r ja thermal resistance junction-ambient 1 --- 85 /w 3 r jc thermal resistance junction-case 1 --- 36 /w 3 bvdss rdson id 30v 9m 10.3a n-ch mosfets with extreme high cell density , which provide excellent rdson and gate charge for most of the synchronous buck converter applications . requirement , 100% eas guaranteed with full function reliability approved. z advanced high cell density trench technology z super low gate charge z excellent cdv/dt effect decline z 100% eas guaranteed z green device available general description features applications z high frequency point-of-load synchronous buck converter for mb/nb/umpc/vga z networking dc-dc power system z load switch absolute maximum ratings thermal data sop8 pin configuration product summery unitpower the UM3004 is the highest performance trench the UM3004 meet the rohs and green product g1 s1 g2 s2 d1 d1 d2 d2 2 45 1 3 8 6 7 top view
2 n-ch 30v fast switching mosfets symbol parameter 3 conditions min. typ. max. unit bv dss drain-source breakdown voltage v gs =0v , i d =250ua 30 --- --- v ? bv dss a? t j bvdss temperature coefficient reference to 25 , i d =1ma --- 0.027 --- v/ r ds(on) static drain-source on-resistance 2 v gs =10v , i d =10a --- 7.5 9 m : v gs =4.5v , i d =8a --- 11 14 v gs(th) gate threshold voltage v gs =v ds , i d =250ua 1.2 1.5 2.5 v ? v gs(th) v gs(th) temperature coefficient --- -5.8 --- mv/ i dss drain-source leakage current v ds =24v , v gs =0v , t j =25 --- --- 1 ua v ds =24v , v gs =0v , t j =55 --- --- 5 i gss gate-source leakage current v gs e f 20v , v ds =0v --- --- f 100 na gfs forward transconductance v ds =5v , i d =10a --- 5.8 --- s r g gate resistance v ds =0v , v gs =0v , f=1mhz --- 2.2 3.8 : q g total gate charge (4.5v) v ds =15v , v gs =4.5v , i d =10a --- 12.6 17.6 nc q gs gate-source charge --- 4.2 5.9 q gd gate-drain charge --- 5.1 7.1 t d(on) turn-on delay time v dd =15v , v gs =10v , r g =3.3 : i d =10a --- 6.2 12.4 ns t r rise time --- 59 106 t d(off) turn-off delay time --- 27.6 55 t f fall time --- 8.4 16.8 c iss input capacitance v ds =15v , v gs =0v , f=1mhz --- 1317 1845 pf c oss output capacitance --- 163 228.2 c rss reverse transfer capacitance --- 131 183.4 symbol parameter 3 conditions min. typ. max. unit eas single pulse avalanche energy 5 v dd =25v , l=0.1mh , i as =20a 45 --- --- mj symbol parameter 3 conditions min. typ. max. unit i s continuous source current 1,6 v g =v d =0v , force current --- --- 10.3 a i sm pulsed source current 2,6 --- --- 42 a v sd diode forward voltage 2 v gs =0v , i s =1a , t j =25 --- --- 1.2 v t rr reverse recovery time i f =10a , di/dt=100a/s , t j =25 --- 12.5 --- ns q rr reverse recovery charge --- 5 --- nc note : 1.the data tested by surface mounted on a 1 inch 2 fr-4 board with 2oz copper. 2.the data tested by pulsed , pulse width ? 300us , duty cycle ? 2% 3.the eas data shows max. rating . the test condition is v dd =25v,v gs =10v,l=0.1mh,i as =35a 4.the power dissipation is limited by 150 junction temperature 5.the min. value is 100% eas tested guarantee. 6.the data is theoretically the same as i d and i dm , in real applications , should be limited by total power dissipation. electrical characteristics (t j =25 , unless otherwise noted) diode characteristics guaranteed avalanche characteristics unitpower UM3004
3 n-ch 30v fast switching mosfets 0 7 14 21 28 35 42 00.511.522.53 v ds , drain-to-source voltage (v) i d drain current (a) v gs =10v v gs =7v v gs =5v v gs =4.5v v gs =3v 6 8 9 11 12 246810 v gs (v) r dson (m
) i d =10a 0 2 4 6 8 10 12 00.30.60.9 v sd , source-to-drain voltage (v) i s - source current(a) t j =150 : t j =25 : 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j ,junction temperature ( : ) normalized v gs(th) 0.2 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( : ) normalized on resistance typical characteristics fig.1 typical output characteristics fig.2 on-resistance vs. gate-source fig.3 forward characteristics of reverse fig.4 gate-charge characteristics fig.5 normalized v gs(th) vs. t j fig.6 normalized r dson vs. t j unitpower UM3004
4 n-ch 30v fast switching mosfets 10 100 1000 10000 15913172125 v ds , drain to source voltage (v) capacitance (pf) f=1.0mhz ciss coss crss 0.01 0.10 1.00 10.00 100.00 0.01 0.1 1 10 100 v ds (v) i d (a) t a =25 o c single pulse 100ms 100us 1ms 10ms dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r ja ) 0.01 0.05 0.1 0.2 duty=0.5 single p dm d = t on /t t jpeak = t c +p dm xr jc t on t fig.8 safe operating area fig.9 normalized maximum transient thermal impedance fig.7 capacitance fig.10 switching time waveform fig.11 unclamped inductive switching waveform unitpower UM3004
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